Title :
Real-time studies of strain relaxation in InGaAs heteroepitaxy
Author :
Beresford, R. ; Lynch, C. ; Hong, S.-K. ; Chason, E.
Author_Institution :
Div. of Eng., Brown Univ., Providence, RI, USA
Abstract :
The relaxation behavior in InGaAs heteroepitaxy during growth interrupts reveal that at a given dislocation density, the glide velocity can be increased orders of magnitude by the presence of the growth flux. These results are interpreted in terms of adatom enhanced nucleation of single kinks at the growth surface.
Keywords :
III-V semiconductors; annealing; dislocation density; gallium arsenide; indium compounds; molecular beam epitaxial growth; nucleation; semiconductor epitaxial layers; semiconductor growth; GaAs; InGaAs; InGaAs heteroepitaxy; adatom enhanced nucleation; dislocation density; glide velocity; growth flux; growth interruption; growth surface; single kinks; strain relaxation; Capacitive sensors; Indium gallium arsenide; Kinetic theory; Molecular beam epitaxial growth; Optical films; Optical sensors; Stress; Substrates; Surface emitting lasers; Temperature;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239896
