Surface reconstructions of InGaAs layers

Author

Millunchick, Joanna Mirecki ; Riposan, Alexandm ; Dall, Bruce J. ; Pearson, Chris A. ; Orr, Bradford G.

Author_Institution

Dept. of Mater. Sci. & Eng., Michigan Univ., Ann Arbor, MI, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

43

Lastpage

44

Abstract

In this paper, we examined the morphology and surface reconstruction of InGa_1-xAs alloy layers during growth and after annealing. Films of different compositions were grown by molecular beam epitaxy on GaAs and InP(001) substrates to thickness less than the critical thickness for 3D islanding or misfit dislocations formation, and examined using in-situ scanning tunneling microscopy.

Keywords

III-V semiconductors; annealing; gallium arsenide; indium compounds; island structure; scanning tunnelling microscopy; semiconductor epitaxial layers; surface morphology; surface reconstruction; 3D islanding; GaAs; GaAs substrates; InGaAs; InGaAs layers; InP; InP(001) substrates; annealing; misfit dislocations; molecular beam epitaxy; scanning tunneling microscopy; surface morphology; surface reconstructions; Annealing; Gallium arsenide; Image reconstruction; Indium gallium arsenide; Indium phosphide; Lattices; Materials science and technology; Semiconductor films; Surface morphology; Surface reconstruction;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239897

Filename

1239897