Title :
Surface reconstructions of InGaAs layers
Author :
Millunchick, Joanna Mirecki ; Riposan, Alexandm ; Dall, Bruce J. ; Pearson, Chris A. ; Orr, Bradford G.
Author_Institution :
Dept. of Mater. Sci. & Eng., Michigan Univ., Ann Arbor, MI, USA
Abstract :
In this paper, we examined the morphology and surface reconstruction of InGa1-xAs alloy layers during growth and after annealing. Films of different compositions were grown by molecular beam epitaxy on GaAs and InP(001) substrates to thickness less than the critical thickness for 3D islanding or misfit dislocations formation, and examined using in-situ scanning tunneling microscopy.
Keywords :
III-V semiconductors; annealing; gallium arsenide; indium compounds; island structure; scanning tunnelling microscopy; semiconductor epitaxial layers; surface morphology; surface reconstruction; 3D islanding; GaAs; GaAs substrates; InGaAs; InGaAs layers; InP; InP(001) substrates; annealing; misfit dislocations; molecular beam epitaxy; scanning tunneling microscopy; surface morphology; surface reconstructions; Annealing; Gallium arsenide; Image reconstruction; Indium gallium arsenide; Indium phosphide; Lattices; Materials science and technology; Semiconductor films; Surface morphology; Surface reconstruction;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239897
