Comparative Study of Irradiated And Annealed ZnO Thin Films For Room Temperature Ammonia Gas Sensing

Author

Kshirsagar, Abhijeet ; Joshi, A.B. ; Joshi, Aditee ; Avasthi, D.K. ; Bhave, T.M. ; Gangal, S.A.

Author_Institution

Univ. of Pune, Pune

fYear

2007

fDate

28-31 Oct. 2007

Firstpage

162

Lastpage

165

Abstract

Ceramic based thin film sensors are well known for gas sensing applications. These sensors are operated at elevated temperature for good sensitivity. ZnO thin film sensors operated at high temperature are used in ammonia sensing application. But to the best of author´s knowledge no room temperature ZnO (Zinc Oxide) thin film sensors are reported. The deposited ZnO films are found to be highly unstable with respect to resistance of the films at room temperature. To increase the stability two different techniques viz annealing and irradiation are tried. Comparative study of annealed and irradiated ZnO films for stability in resistance is done. Further the performance of these films as ammonia (NH₃) gas sensor at room temperature has been studied. The results obtained are reported in this paper and analyzed.

Keywords

II-VI semiconductors; ammonia; annealing; chemical variables measurement; gas sensors; semiconductor thin films; wide band gap semiconductors; ZnO; ammonia gas sensing; ammonia gas sensor; annealing; ceramic based thin film; irradiation; resistance stability; zinc oxide thin films; Annealing; Argon; Gas detectors; Glass; Sputtering; Stability; Temperature sensors; Thin film sensors; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2007 IEEE

Conference_Location

Atlanta, GA

ISSN

1930-0395

Print_ISBN

978-1-4244-1261-7

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2007.4388361

Filename

4388361