DocumentCode :
2203436
Title :
Electrical and optical activation studies of Si-implanted AlxGa1-xN by Hall-effect and photoluminescence measurements
Author :
Ryu, Mee-Yi ; Chitwood, E.A. ; Yeo, Yung Kee ; Hengehold, Robert L. ; Steiner, Todd
Author_Institution :
Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
51
Lastpage :
52
Abstract :
Ion-implanted AlxGa1-xN has been studied much less compared to GaN, and thus very little is known about implanted AlxGa1-xN. Therefore, systematic electrical and optical activation studies of Si-implanted AlxGa1-xN have been made as a function of ion dose, anneal temperature, and anneal time.
Keywords :
Hall mobility; III-V semiconductors; aluminium compounds; annealing; carrier density; elemental semiconductors; gallium compounds; photoluminescence; silicon; wide band gap semiconductors; AlxGa1-xN:Si; Hall-effect; Si-implanted AlxGa1-xN; anneal temperature; electrical activation; ion dose; optical activation; photoluminescence; Annealing; Electric variables measurement; Excitons; Impurities; Luminescence; Optical scattering; Photoluminescence; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239901
Filename :
1239901
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2203436
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