Title :
Frequency and breakdown properties of AlGaN/GaN HEMTs
Author :
Vertiatchikh, A. ; Schaff, W.J. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
AlGaN/GaN heterostructure transistors show potential in high-frequency high-power applications because of their high breakdown voltages and high electron saturation velocities. The operating drain voltage, limiting the maximum RF output power, should be lower than breakdown voltage of the device. The frequency and breakdown properties of the AlGaN/GaN heterostructure transistors have been studied.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN heterostructure transistors; HEMT; breakdown voltages; drain voltage; electron saturation velocities; high electron mobility transistors; high-frequency high-power applications; Aluminum gallium nitride; Breakdown voltage; Cutoff frequency; Electric breakdown; Fabrication; Frequency measurement; Gallium nitride; HEMTs; MODFETs; Radio frequency;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239902
