Title :
Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides
Author :
Song, June O. ; Leem, Dong-Seok ; Kim, K.-K. ; Seong, Tae-Yeon
Author_Institution :
Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea
Abstract :
We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10-5-10-6 Ωcm2. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.
Keywords :
Auger electron spectra; III-V semiconductors; X-ray photoelectron spectra; annealing; contact resistance; gallium compounds; indium compounds; nickel; ohmic contacts; semiconductor-metal boundaries; tin compounds; wide band gap semiconductors; 2 min; 450 to 600 degC; Auger electron spectra; Ni-ITO-GaN; Ni-InSnO-GaN; Ni/transparent conducting oxides; X-ray photoemission spectra; annealing; contact resistances; ohmic contacts; p-GaN; Contact resistance; Electrical resistance measurement; Electrons; Gallium nitride; Materials science and technology; Ohmic contacts; Optical films; Photoelectricity; Rapid thermal annealing; Spectroscopy;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239903
