Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides

Author

Song, June O. ; Leem, Dong-Seok ; Kim, K.-K. ; Seong, Tae-Yeon

Author_Institution

Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

55

Lastpage

56

Abstract

We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600°C for 2 min in air ambient result low specific contact resistances of 10^-5-10^-6 Ωcm². Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.

Keywords

Auger electron spectra; III-V semiconductors; X-ray photoelectron spectra; annealing; contact resistance; gallium compounds; indium compounds; nickel; ohmic contacts; semiconductor-metal boundaries; tin compounds; wide band gap semiconductors; 2 min; 450 to 600 degC; Auger electron spectra; Ni-ITO-GaN; Ni-InSnO-GaN; Ni/transparent conducting oxides; X-ray photoemission spectra; annealing; contact resistances; ohmic contacts; p-GaN; Contact resistance; Electrical resistance measurement; Electrons; Gallium nitride; Materials science and technology; Ohmic contacts; Optical films; Photoelectricity; Rapid thermal annealing; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239903

Filename

1239903