DocumentCode :
2203516
Title :
The condition numbers arising in MESFET parameter extraction
Author :
King, Firman Dean ; Winson, Peter ; Snider, Arthur David ; Dunleavy, Larry ; Levinson, Deborah P.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
fYear :
1996
fDate :
11-14 Apr 1996
Firstpage :
385
Lastpage :
387
Abstract :
Conditions numbers expressing the sensitivity of computed circuit element values to inaccuracies in S-parameter measurements are derived and evaluated for a standard small-signal MESFET model. The condition numbers shed light on the common difficulty experienced by transistor modelers in extracting accurate values for the input resistance. Other elements are also classified according to their sensitivity
Keywords :
S-parameters; electric resistance; parameter estimation; power MESFET; semiconductor device models; sensitivity analysis; MESFET parameter extraction; S-parameter; circuit element values; condition numbers; input resistance; sensitivity; standard small-signal MESFET model; transistor modelers; Circuits; Delay effects; Electric variables measurement; Electrical resistance measurement; MESFETs; Measurement standards; Nonlinear equations; Parameter extraction; Scattering parameters; Upper bound;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
0-7803-3088-9
Type :
conf
DOI :
10.1109/SECON.1996.510095
Filename :
510095
Link To Document :
بازگشت