DocumentCode :
2203523
Title :
Electrical and optical properties of carbon-related defects in GaN
Author :
Armitage, R. ; Yang, Q. ; Weber, E.R. ; Fang, Z.-Q. ; Hautakangas, S. ; Saarinen, K.
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
57
Lastpage :
58
Abstract :
The electrical and optical properties of carbon-related defects in GaN are studied. A series of samples with C concentrations varying from 5x1016 to 1x1020cm-3was characterized by SIMS, resistivity, photoluminescence, thermally simulated current, Raman scattering, and positron annihilation spectroscopy.
Keywords :
III-V semiconductors; Raman spectra; carbon; crystal defects; electrical resistivity; gallium compounds; photoluminescence; positron annihilation; secondary ion mass spectra; thermally stimulated currents; wide band gap semiconductors; GaN:C; Raman scattering; SIMS; carbon-related defects; photoluminescence; positron annihilation spectra; resistivity; thermally simulated current; Conductivity; Doping; Gallium nitride; Luminescence; Mechanical factors; Photoluminescence; Positrons; Raman scattering; Spectroscopy; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239904
Filename :
1239904
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2203523
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