• DocumentCode
    2203523
  • Title

    Electrical and optical properties of carbon-related defects in GaN

  • Author

    Armitage, R. ; Yang, Q. ; Weber, E.R. ; Fang, Z.-Q. ; Hautakangas, S. ; Saarinen, K.

  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    57
  • Lastpage
    58
  • Abstract
    The electrical and optical properties of carbon-related defects in GaN are studied. A series of samples with C concentrations varying from 5x1016 to 1x1020cm-3was characterized by SIMS, resistivity, photoluminescence, thermally simulated current, Raman scattering, and positron annihilation spectroscopy.
  • Keywords
    III-V semiconductors; Raman spectra; carbon; crystal defects; electrical resistivity; gallium compounds; photoluminescence; positron annihilation; secondary ion mass spectra; thermally stimulated currents; wide band gap semiconductors; GaN:C; Raman scattering; SIMS; carbon-related defects; photoluminescence; positron annihilation spectra; resistivity; thermally simulated current; Conductivity; Doping; Gallium nitride; Luminescence; Mechanical factors; Photoluminescence; Positrons; Raman scattering; Spectroscopy; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239904
  • Filename
    1239904
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2203523