Title :
Epitaxial growth of InN on GaN by metalorganic chemical vapor deposition
Author :
Seo, HutChan ; Kim, Hyun Jin ; Na, Hyunseok ; Kwon, SoowYong ; Kim, Hee Jin ; Shin, Yoori ; Lee, Keon-Hun ; Cheong, Hyeonsik M. ; Yoon, Euijoon
Author_Institution :
Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
Abstract :
We grew InN epilayers on GaN by metalorganic chemical vapor deposition (MOCVD) and characterized the optical and structural properties of InN. Crystal structure and surface morphology were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Optical properties were measured by photoluminescence (PL).
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; crystal structure; indium compounds; photoluminescence; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; GaN; InN; MOCVD; PL; SEM; X-ray diffraction; XRD; crystal structure; epitaxial growth; metalorganic chemical vapor deposition; optical properties; photoluminescence; scanning electron microscopy; structural properties; surface morphology; Chemical vapor deposition; Electron optics; Epitaxial growth; Gallium nitride; MOCVD; Optical diffraction; Scanning electron microscopy; Surface morphology; X-ray diffraction; X-ray scattering;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239905
