High temperature GaN based Schottky diode gas sensors

Author

Ren, F. ; Kim, Jihyun ; Gila, B.P. ; Abernathy, C.R. ; Pearton, S.J. ; Baca, A.G. ; Briggs, R.D. ; Chung, G.Y.

Author_Institution

Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

61

Lastpage

62

Abstract

In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts. Here we investigated thermal stability of W and WSi based Schottky metals for high temperature gas sensing. Schottky characteristics were observed for Au/Ti/W/SiC up to 900°C annealing.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; annealing; gallium compounds; gas sensors; gold; palladium; platinum; silicon compounds; thermal stability; titanium; tungsten; wide band gap semiconductors; 900 degC; Au-Ti-W-SiC; Au/Ti/W/SiC contacts; Pd Schottky contacts; Pd-GaN; Pt Schottky contacts; Pt-GaN; SiC based Schottky diodes; W based schottky metals; WSi based Schottky metals; annealing; high temperature GaN based Schottky diode gas sensors; hydrogen gas sensors; thermal stability; Annealing; Gallium nitride; Gas detectors; Gold; Hydrogen; Schottky barriers; Schottky diodes; Silicon carbide; Temperature sensors; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239906

Filename

1239906