Title :
High temperature GaN based Schottky diode gas sensors
Author :
Ren, F. ; Kim, Jihyun ; Gila, B.P. ; Abernathy, C.R. ; Pearton, S.J. ; Baca, A.G. ; Briggs, R.D. ; Chung, G.Y.
Author_Institution :
Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts. Here we investigated thermal stability of W and WSi based Schottky metals for high temperature gas sensing. Schottky characteristics were observed for Au/Ti/W/SiC up to 900°C annealing.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; annealing; gallium compounds; gas sensors; gold; palladium; platinum; silicon compounds; thermal stability; titanium; tungsten; wide band gap semiconductors; 900 degC; Au-Ti-W-SiC; Au/Ti/W/SiC contacts; Pd Schottky contacts; Pd-GaN; Pt Schottky contacts; Pt-GaN; SiC based Schottky diodes; W based schottky metals; WSi based Schottky metals; annealing; high temperature GaN based Schottky diode gas sensors; hydrogen gas sensors; thermal stability; Annealing; Gallium nitride; Gas detectors; Gold; Hydrogen; Schottky barriers; Schottky diodes; Silicon carbide; Temperature sensors; Thermal stability;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239906
