Title :
Origin and length scale of carrier localisation in GaInAsN analysed by transmission electron microscopy
Author :
Albrecht, M. ; Remmele, T. ; Grillo, V. ; Strunk, H.P. ; Kaschner, A. ; Hoffmann, A. ; Egorov, A. ; Riechert, H.
Author_Institution :
Inst. fur Werkstoffwissenschaften, Erlangen-Nurnberg Univ., Erlangen, Germany
Abstract :
In this article, the optical and structural analysis of carrier localisation in InGaAsN quantum wells is described. Cathodoluminescence, carrier localisation in GaInAsN layers were analysed by transmission electron microscopy. GaInAsN layers have been grown by molecular beam epitaxy.
Keywords :
III-V semiconductors; arsenic compounds; cathodoluminescence; gallium compounds; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor quantum wells; transmission electron microscopy; GaInAsN; InGaAsN quantum wells; TEM; carrier localisation; cathodoluminescence; molecular beam epitaxy; optical properties; structural properties; transmission electron microscopy; Atom optics; Energy resolution; Fluctuations; Gallium arsenide; Lead; Optical filters; Photoluminescence; Spatial resolution; Temperature dependence; Transmission electron microscopy;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239907
