Title :
A simple method to determine strains in InGaNAs/GaAs quantum wells
Author :
Kim, N.J. ; Jang, Y.D. ; Lee, D. ; Park, K.H. ; Jeong, W.G. ; Wang, J.W.
Author_Institution :
Dept. of Phys., Chungnam Nat. Univ., Daejon, South Korea
Abstract :
We have investigated a series of InGaNAs/GaAs quantum wells grown by MOCVD method at 540°C. We estimate the lattice constant of InAsGaN layer by measuring the HH-LH energy splitting. Energy gap is determined by PL peak spectra at room temperature.
Keywords :
III-V semiconductors; MOCVD coatings; energy gap; gallium arsenide; gallium compounds; indium compounds; internal stresses; lattice constants; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; 293 to 298 K; 540 C; InAsGaN layer; InGaNAs-GaAs; InGaNAs/GaAs quantum wells; MOCVD; PL peak spectra; Strain determination; energy gap; energy splitting; lattice constant; room temperature; Capacitive sensors; Gallium arsenide; Indium; Laser theory; Lattices; Nitrogen; Optical materials; Photonic band gap; Semiconductor materials; Temperature;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239908
