Title :
Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 μm
Author :
Jang, Y.D. ; Kim, N.J. ; Park, K.H. ; Jeong, W.G. ; Jang, J.W. ; Lee, D.
Author_Institution :
Dept. of Phys., Chungnam Nat. Univ., Daejon, South Korea
Abstract :
We present optical characterstics of InAsN/GaAs QD samples that contain a small amount of nitrogen inside InAs QD and emit a narrow photoluminescence (PL) signal at 1.3 μm . The small addition of nitrogen into an InAs layer lowers the energy gap and at the same time decreases the lattice constant.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; lattice constants; photoluminescence; semiconductor quantum dots; wide band gap semiconductors; 1.3 micron; InAsN-GaAs; InAsN/GaAs quantum dots; PL; QD; energy gap; lattice constant; nitrogen addition; optical properties; photoluminescence; Charge carrier lifetime; Delay effects; Energy states; Gallium arsenide; Nitrogen; Pulse measurements; Quantum dots; Stationary state; Stimulated emission; US Department of Transportation;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239910
