Title :
Device performance characterization and modeling of recombination current in CdTe/CdS pn junction diodes
Author :
Oman, Daniel M. ; Ferekides, Chris S. ; Morel, Don L.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
A comprehensive model of pn junction diode behaviour based on Shockley-Read-Hall (SRH) recombination theory is presented and been successfully applied to a large number CdTe photovoltaic cells in the 10%-15% efficiency range. The model accounts for the range of measured values of diode quality factor and reverse saturation current found in our devices as well as an observed relationship between these parameters
Keywords :
II-VI semiconductors; cadmium compounds; electron-hole recombination; semiconductor device models; semiconductor diodes; solar cells; 10 to 15 percent; CdTe photovoltaic cells; CdTe-CdS; CdTe/CdS pn junction diodes; Shockley-Read-Hall recombination theory; device performance characterization; diode quality factor; recombination current modeling; reverse saturation current; Contacts; Current density; Dark current; Equations; Equivalent circuits; Lighting; Photovoltaic cells; Q factor; Schottky diodes; Voltage;
Conference_Titel :
Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
0-7803-3088-9
DOI :
10.1109/SECON.1996.510103
