DocumentCode
2203714
Title
Effects of thermal annealing on GaInNAs QDs grown on GaAs [001]
Author
Nishikawa, A. ; Hong, Y.G. ; Tu, C.W.
Author_Institution
Dept. of Electr. & Comput. Sci. Eng., California Univ., San Diego, La Jolla, CA, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
70
Lastpage
71
Abstract
The effects of thermal annealing on optical properties of GaInNAs QDs were studied. QD samples were grown on GaAS [001] substrates by gas-source molecular beam epitaxy (GSMBE) equipped with a rf plasma nitrogen source. The PL spectra of GaInNAs QDs with RTA treatment at 600, 700, and 800 °c annealing for 10s.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; photoluminescence; rapid thermal annealing; semiconductor quantum dots; wide band gap semiconductors; 10 s; 600 degC; 700 degC; 800 degC; GSMBE; GaAs; GaAs [001] substrates; GaInNAs; GaInNAs quantum dots; PL spectra; gas-source molecular beam epitaxy; optical properties; rf plasma nitrogen source; thermal annealing; Computer science; Fiber lasers; Gallium arsenide; Nitrogen; Optical materials; Plasma temperature; Quantum computing; Quantum dot lasers; Rapid thermal annealing; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239911
Filename
1239911
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