• DocumentCode
    2203735
  • Title

    Applications of a generalized Dirichlet principle to transistor modeling

  • Author

    Winson, Peter ; Snider, Arthur David

  • Author_Institution
    Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
  • fYear
    1996
  • fDate
    11-14 Apr 1996
  • Firstpage
    425
  • Lastpage
    427
  • Abstract
    We report the theory, implementation and results of using a Poisson solver to compensate the measured valuer of drain conductance and transconductance in a nonlinear MESFET so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited
  • Keywords
    Schottky gate field effect transistors; electric admittance; semiconductor device models; I-V curves; Poisson solver; drain conductance; generalized Dirichlet principle; large-signal model; nonlinear MESFET; transconductance; transistor modeling; Boundary conditions; Data mining; Electric variables measurement; Integral equations; MESFETs; Mathematical model; Poisson equations; Scattering parameters; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE
  • Conference_Location
    Tampa, FL
  • Print_ISBN
    0-7803-3088-9
  • Type

    conf

  • DOI
    10.1109/SECON.1996.510104
  • Filename
    510104
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2203735