Title :
Applications of a generalized Dirichlet principle to transistor modeling
Author :
Winson, Peter ; Snider, Arthur David
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
We report the theory, implementation and results of using a Poisson solver to compensate the measured valuer of drain conductance and transconductance in a nonlinear MESFET so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited
Keywords :
Schottky gate field effect transistors; electric admittance; semiconductor device models; I-V curves; Poisson solver; drain conductance; generalized Dirichlet principle; large-signal model; nonlinear MESFET; transconductance; transistor modeling; Boundary conditions; Data mining; Electric variables measurement; Integral equations; MESFETs; Mathematical model; Poisson equations; Scattering parameters; Transconductance; Voltage;
Conference_Titel :
Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
0-7803-3088-9
DOI :
10.1109/SECON.1996.510104
