Low threshold, CW, room temperature 1.49 μm GaAs-based lasers

Author

Bank, Seth R. ; Wistey, Mark A. ; Yuen, Homan B. ; Goddard, Lynford L. ; Harris, James S.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., CA, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

74

Lastpage

75

Abstract

We present, for the first time, a CW 1.5 μm range GaInNAs(Sb) laser with threshold current density comparable to 1.3 μm range GaInNAs laser. The lasers used in this study were conventional ridge waveguide devices. The devices were grown by solid source molecular beam epitaxy (MBE) with nitrogen supplied rf plasma cell. The active region was nominally based on a QW with room temperature (RT) photoluminescence (PL) at 1.43 μm and line width of 29.7 meV.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; ridge waveguides; waveguide lasers; wide band gap semiconductors; 1.49 micron; 1.5 micron; 293 to 298 K; CW; GaInNAsSb; GaInNAsSb laser; MBE; PL; QW; RT; molecular beam epitaxy; nitrogen; photoluminescence; rf plasma cell; ridge waveguide; room temperature; Molecular beam epitaxial growth; Nitrogen; Plasma density; Plasma devices; Plasma sources; Plasma temperature; Plasma waves; Solids; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239913

Filename

1239913