An analytical model for the insulated-gate bipolar transistor under all free-carrier injection conditions

Author

Yue, Y. ; Liou, J.J. ; Batarseh, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

fYear

1996

fDate

11-14 Apr 1996

Firstpage

432

Lastpage

435

Abstract

The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model

Keywords

insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; IGBT; MEDICI; ambipolar transport equation; analytical model; current-voltage characteristics; free-carrier injection conditions; insulated-gate bipolar transistor; power switching device; two-dimensional device simulator; Analytical models; Bipolar transistors; Charge carrier processes; Electron mobility; Equations; Insulated gate bipolar transistors; Insulation; Medical simulation; Predictive models; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE

Conference_Location

Tampa, FL

Print_ISBN

0-7803-3088-9

Type

conf

DOI

10.1109/SECON.1996.510106

Filename

510106