Title :
An analytical model for the insulated-gate bipolar transistor under all free-carrier injection conditions
Author :
Yue, Y. ; Liou, J.J. ; Batarseh, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model
Keywords :
insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; IGBT; MEDICI; ambipolar transport equation; analytical model; current-voltage characteristics; free-carrier injection conditions; insulated-gate bipolar transistor; power switching device; two-dimensional device simulator; Analytical models; Bipolar transistors; Charge carrier processes; Electron mobility; Equations; Insulated gate bipolar transistors; Insulation; Medical simulation; Predictive models; Threshold voltage;
Conference_Titel :
Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
0-7803-3088-9
DOI :
10.1109/SECON.1996.510106
