Title :
A comparison of MBE-grown and ion-implanted GaN:Er for 1.54 μm emitters
Author :
Torvik, John T. ; Ng, Hock M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA
Abstract :
In this study, we investigate and compare Er-doped GaN prepared using in-situ doping during MBE growth and ex-situ doping using ion implantation focusing on material properties relevant to the design of 1.54 μm emitters/amplifiers. We describe the luminescence properties (spectra, temperature dependence and lifetimes), optimum doping and co-doping concentrations, as well as index of refraction data.
Keywords :
III-V semiconductors; cathodoluminescence; erbium; gallium compounds; ion implantation; molecular beam epitaxial growth; photoluminescence; radiative lifetimes; refractive index; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; 1.54 micron; Er-doped GaN preparation; GaN:Er; MBE growth; amplifiers; doping concentrations; emitters; ion implantation; lifetimes; luminescence properties; material properties; refraction data; Erbium; Photoluminescence; Temperature;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239916
