Correlations between In composition and tertiarybutylarsine (TBAs) flow rate in InGaNAs/GaN multiple quantum well by metalorganic chemical vapor deposition

Author

Na, Hyunseok ; Kim, Hyun Jin ; Kwon, Soon-Yong ; Yoon, Euijoon ; Sone, Cheolsoo ; Park, YongJo

Author_Institution

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

87

Lastpage

88

Abstract

InGaNAs/GaN MQW structures were grown on GaN/sapphire substrates by low-pressure MOCVD. We investigated the structural and optical properties of InGaNAs MQW and correlation between As concentration and In composition using X-ray diffraction (XRD), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and photoluminescence (PL) spectra.

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; crystal structure; gallium arsenide; gallium compounds; indium compounds; photoluminescence; secondary ion mass spectra; semiconductor growth; semiconductor quantum wells; transmission electron microscopy; wide band gap semiconductors; As concentration; GaN-Al₂O₃; GaN/sapphire substrates; In composition; InGaNAs-GaN; InGaNAs/GaN multiple quantum well; PL spectra; SIMS; TEM; X-ray diffraction; XRD; low-pressure MOCVD; metalorganic chemical vapor deposition; optical properties; photoluminescence specta; secondary ion mass spectrometry; tertiarybutylarsine flow rate; transmission electron microscopy; Chemical vapor deposition; Electron optics; Gallium nitride; MOCVD; Optical diffraction; Optical microscopy; Particle beam optics; Quantum well devices; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239918

Filename

1239918