Influence of arsenic isoelectronic Co-doping on the electronic properties of n-and p-type GaN

Author

Guido, Louis J. ; Dickerson, Bryan D. ; Houck, William D. ; Gray, David T.

Author_Institution

Dept. of Mater. Sci. & Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

89

Lastpage

90

Abstract

GaN samples were synthesized by OMVPE using TMGa, NH₃, AsH₃, SiH₄ and Cp₂Mg as precursors, and H₂ as the carrier gas. Direct comparisons between n-and p-type GaN samples with and without arsenic demonstrate that isoelectronic co-doping yields significant improvements in electronic properties. The surface morphology of both n-and p-type GaN improves considerably with the addition of AsH₃ into the OMVPE environment.

Keywords

Hall effect; III-V semiconductors; MOCVD; arsenic; gallium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; GaN:As; OMVPE; arsenic isoelectronic doping; electronic properties; n-type GaN; p-type GaN; surface morphology; Ash; Atom optics; Electrons; Gallium nitride; Mechanical factors; Optical sensors; Photoluminescence; Semiconductor device doping; Surface morphology; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239919

Filename

1239919