Influence of arsenic isoelectronic Co-doping on the electronic properties of n-and p-type GaN

GaN samples were synthesized by OMVPE using TMGa, NH₃, AsH₃, SiH₄ and Cp₂Mg as precursors, and H₂ as the carrier gas. Direct comparisons between n-and p-type GaN samples with and without arsenic demonstrate that isoelectronic co-doping yields significant improvements in electronic properties. The surface morphology of both n-and p-type GaN improves considerably with the addition of AsH₃ into the OMVPE environment.