DocumentCode
2203967
Title
Conductance mapping for the electron and hole energy levels in InAs/GaAs self-assembled quantum dots
Author
Chang, Wen-Hao ; Hsu, Tzu-Min ; Chen, Wen-Yen ; Chang, Hsiang-Szu ; Yeh, Nien-Tzu ; Chyi, Jen-Inn
Author_Institution
Dept. of Phys., Nat. Central Univ., Chung-li, Taiwan
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
93
Lastpage
94
Abstract
The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.
Keywords
III-V semiconductors; band structure; electric admittance; gallium arsenide; indium compounds; self-assembly; semiconductor quantum dots; InAs-GaAs; InAs/GaAs self-assembled quantum dots; admittance spectra; conductance mapping; electron energy levels; hole energy levels; shell structures; Charge carrier processes; Diodes; Electrons; Energy states; Gallium arsenide; Quantum dot lasers; Quantum dots; Spectroscopy; Tunneling; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239921
Filename
1239921
Link To Document