Ion implantation for creating room temperature ferromagnetism in wide bandgap semiconductors

Author

Pearton, S.J. ; Abernathy, C.R. ; Ren, F. ; Norton, D.P. ; Hebard, A.F. ; Zavada, J.M. ; Wilson, R.G.

Author_Institution

Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

110

Lastpage

111

Abstract

We summarize recent progress in creating dilute magnetic semiconductors such as (Ga,Mn)N, (Ga,Mn)P, (Zn,Mn)O, (Si,Mn)C, and (Zn,Mn)SiGeN₂ exhibiting room temperature ferromagnetism through the use of ion implantation, the origins of the magnetism and its potential applications in novel device such as spin-polarized light emitters and spin field effect transistors.

Keywords

Ge-Si alloys; II-VI semiconductors; III-V semiconductors; aluminium compounds; cadmium compounds; chromium compounds; elemental semiconductors; ferromagnetic materials; gallium arsenide; gallium compounds; germanium; germanium compounds; indium compounds; ion implantation; manganese compounds; semimagnetic semiconductors; silicon; wide band gap semiconductors; zinc compounds; 293 to 298 K; AlAs; CdMnGeP₂; GaAs; GaCrN; GaMnN; GaMnP; GaSb; Si; ZnO; dilute magnetic semiconductors; ion implantation; room temperature ferromagnetism; spin field effect transistors; spin polarized light emitters; wide bandgap semiconductors; Ion implantation; Magnetic devices; Magnetic materials; Magnetic properties; Magnetic semiconductors; Optoelectronic and photonic sensors; Photonic band gap; Semiconductor materials; Temperature; Wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239930

Filename

1239930