Title :
Structural and magnetic properties of Er doped GaN
Author :
Bang, Hyungiin ; Sawahata, Junji ; Tsunemi, Masato ; Seo, Jongwon ; Yanagihara, Hideto ; Kita, Eiji ; Akimoto, Katsuhiio
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Japan
Abstract :
In this paper, structural and magnetic properties of Er-doped GaN were studied. Er-doped GaN shows paramagnetic character, however, clear steps around zero fields were observed at all measured temperatures. These results indicates that the coexistence of ferromagnetic order.
Keywords :
III-V semiconductors; erbium; ferromagnetic materials; gallium compounds; magnetic epitaxial layers; magnetic semiconductors; magnetisation; paramagnetic materials; semiconductor epitaxial layers; wide band gap semiconductors; Er doped GaN; GaN:Er; ferromagnetic order; magnetic properties; paramagnetism; structural properties; Atomic measurements; Erbium; Gallium nitride; Magnetic field measurement; Magnetic materials; Magnetic properties; Magnetization; Nitrogen; Paramagnetic materials; Temperature measurement;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239932
