Title :
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)
Abstract :
The following topics are dealt with: CMOS ULSI and SoC technology; device packaging; smart, intelligent and power IC; power devices; memory technology; Si analog/RF devices and circuits; semiconductor materials; gate dielectrics; interconnect technology; deep submicron processing technology; silicide MOS devices; SiGe/Si materials and devices; SOI materials and devices; ferroelectric materials and devices; MEMS and sensors; modeling and simulation; reliability; device and material characterization; IC design; wide bandgap materials and devices; optoelectronic devices; heterojunction devices and circuits; nanostructures and nanodevices; thin film materials and devices
Keywords :
CMOS integrated circuits; analogue integrated circuits; circuit simulation; dielectric thin films; ferroelectric storage; ferroelectric thin films; integrated circuit design; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit modelling; integrated circuit packaging; integrated memory circuits; micromechanical devices; nanotechnology; optoelectronic devices; power integrated circuits; power semiconductor devices; semiconductor device measurement; semiconductor materials; silicon-on-insulator; wide band gap semiconductors; CMOS ULSI technology; IC design; MEMS; SOI devices; SOI materials; Si; Si analog/RF circuits; Si analog/RF devices; Si-SiO/sub 2/; SiGe-Si; SiGe/Si devices; SiGe/Si materials; SoC technology; device characterization; device packaging; ferroelectric devices; ferroelectric materials; gate dielectrics; heterojunction circuits; heterojunction devices; intelligent power IC; interconnect technology; material characterization; memory technology; modeling; nanodevices; nanostructures; optoelectronic devices; power devices; processing technology; reliability; semiconductor materials; sensors; silicide MOS devices; simulation; smart power IC; thin film devices; thin film materials; wide bandgap devices; wide bandgap materials;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai, China
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981413
