Title :
InAs quantum dots infrared photodetectors
Author :
Ye, Zhengmao ; Campbell, Joe C. ; Chen, Zhonghui ; Kim, E.T. ; Madhukar, A.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In this paper, we present a study of a series of InAs quantum dot infrared photodetectors (QDIPs) with unintentionally doped active regions. The wavelength tunability will be demonstrated by changes of the content of In and Al in the InGaAs cap layers and InAlGaAs lateral potential confinement layers. The samples were grown on semi-insulating GaAs(001) substrates by solid-source molecular beam epitaxy (MBE). Fourier transformation infrared (FTIR) spectroscopy measurement demonstrated peak photoresponses at the wavelength ranging from ∼ 5.6 μm to ∼ 9 μm. The dark current and noise of the QDIP samples were measured at various temperature.
Keywords :
Fourier transform spectra; III-V semiconductors; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; infrared detectors; infrared spectra; photoconductivity; photodetectors; quantum well devices; semiconductor device noise; semiconductor epitaxial layers; semiconductor quantum dots; 5.6 to 9 micron; FTIR; Fourier transformation infrared spectra; GaAs; InAlGaAs; InAlGaAs lateral potential confinement layers; InAs quantum dots infrared photodetectors; InGaAs; InGaAs cap layers; dark current; molecular beam epitaxy; noise; peak photoresponses; semiinsulating GaAs(001) substrates; unintentionally doped active regions; wavelength tunability; Dark current; Indium gallium arsenide; Infrared spectra; Molecular beam epitaxial growth; Photodetectors; Quantum dots; Spectroscopy; Substrates; Temperature measurement; Wavelength measurement;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239938
