DocumentCode
2204433
Title
Effects of thin GaAs cap layer on optical properties of InAs/InGaAs/InP quantum dot
Author
Park, Kwangmin ; Hwang, Heedon ; Lee, Haksun ; Jeon, Yu Jin ; Cheong, Hyeonsik M. ; Yoon, Euijoon
Author_Institution
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
127
Lastpage
128
Abstract
We have studied the influence of thin GaAs capping layer (5-10 monolayers) on optical properties of InAs QDs. After the growth of thin GaAs capping layer, the 70 nm thick top InGaAs capping layer was deposited at 570 oC or 610 oC. The insertion of thin GaAs cap layer on QDs led to blue shift of peak of photoluminescence (PL). In addition, full width at half maximum (FWHM) of the PL peak decreases from 35 mev to 20 mev by inserting 10 ML GaAs layer.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; spectral line shift; 570 degC; 610 degC; FWHM; InAs-InGaAs-InP; InAs/InGaAs/InP quantum dot; PL peak; blue shift; full width at half maximum; optical properties; photoluminescence; thin GaAs cap layer; Atomic force microscopy; Buffer layers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Morphology; Optical buffering; Quantum dots; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239939
Filename
1239939
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