Title :
Effects of thin GaAs cap layer on optical properties of InAs/InGaAs/InP quantum dot
Author :
Park, Kwangmin ; Hwang, Heedon ; Lee, Haksun ; Jeon, Yu Jin ; Cheong, Hyeonsik M. ; Yoon, Euijoon
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
Abstract :
We have studied the influence of thin GaAs capping layer (5-10 monolayers) on optical properties of InAs QDs. After the growth of thin GaAs capping layer, the 70 nm thick top InGaAs capping layer was deposited at 570 oC or 610 oC. The insertion of thin GaAs cap layer on QDs led to blue shift of peak of photoluminescence (PL). In addition, full width at half maximum (FWHM) of the PL peak decreases from 35 mev to 20 mev by inserting 10 ML GaAs layer.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; spectral line shift; 570 degC; 610 degC; FWHM; InAs-InGaAs-InP; InAs/InGaAs/InP quantum dot; PL peak; blue shift; full width at half maximum; optical properties; photoluminescence; thin GaAs cap layer; Atomic force microscopy; Buffer layers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Morphology; Optical buffering; Quantum dots; US Department of Transportation;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239939
