DocumentCode :
2204518
Title :
Three-color InAs/InGaAs quantum dots-in-a-well infrared photodetectors
Author :
Krishna, Saniav ; Raghavan, Sunil ; Von Winckel, Greg ; Stintz, Andreas ; Ariyawansa, G. ; Matsik, S.G. ; Perera, A.G.U.
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
133
Lastpage :
134
Abstract :
In this article, we report a three-color (λp1∼ 4 μm, λp2∼ 8 μm and λp3∼ 25 μm) quantum dot detector. The n-i-n detector consists of 10 layers of InAs dots in an InGaAs well. The conduction band diagram along with the intersubband energy spacing obtained from photoluminescence and absorption measurements.
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; indium compounds; infrared detectors; photodetectors; photoluminescence; semiconductor quantum dots; 25 micron; 4 micron; 8 micron; InAs-InGaAs; conduction band diagram; infrared photodetectors; intersubband energy; n-i-n detector; photoluminescence; semiconductor quantum wells; three color InAs/InGaAs quantum dots; Astronomy; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Photodetectors; Physics; Quantum dots; Space technology; Stationary state; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239942
Filename :
1239942
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2204518
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