Title :
Multiple-wavelength InGaN-based LED arrays
Author :
Sakai, S. ; Aoyama, K. ; Hong-Dong Li ; Sato, H. ; Lee, Yong Bae
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokushima Univ., Japan
Abstract :
In this report we demonstrate a novel multiple-color LED array in the emission wavelength of 450 nm to 510 nm. This novel device has been fabricated by grooving and depositing Ti on the back surface of a sapphire substrate to lower the substrate surface temperature during MOCVD(metalorganic chemical vapor deposition) growth. This LED is useful in realizing white LED with improved color rendering and in other applications that need multiple colors.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor growth; semiconductor quantum wells; titanium; wide band gap semiconductors; 450 to 510 nm; Al2O3; InGaN based LED arrays; InGaN-GaN; MOCVD growth; Ti; color rendering; grooving; metalorganic chemical vapor deposition growth; multiple color LED array; sapphire substrate temperature; Chemical vapor deposition; Gallium nitride; Laboratories; Light emitting diodes; MOCVD; Phosphors; Satellites; Solids; Substrates; Temperature sensors;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239945
