Title :
High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates
Author :
Lutsenko, E.V. ; Pavlovskii, V.N. ; Zubialevich, V.Z. ; Gurskii, A.L. ; Ryabtsev, A.G. ; Ryabtsev, G.I. ; Yablonskii, G.P. ; Dikme, Y. ; Szymakowski, A. ; Kalisch, H. ; Jansen, R.H. ; Schineller, B. ; Heuken, M.
Author_Institution :
Inst. of Phys., Nat. Acad. of Sci., Minsk, Belarus
Abstract :
In this report InGaN/GaN multiple quantum well (MQW) heterostructures were grown in AIXTRON MOVPE reactors on (111)-oriented Si substrates. The temperature behaviour of the laser threshold is defined mainly by spontaneous emission characteristics of excitation level equal to the laser threshold such as spontaneous recombination efficiency, full width at half maximum and position of the spectrum. Rates of spontaneous and nonradiative recombination, the value of internal quantum efficiency were estimated.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical pumping; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor quantum wells; spontaneous emission; wide band gap semiconductors; InGaN-GaN; MOVPE reactors; Si; Si substrates; full width half maximum; high temperature operation; internal quantum efficiency; laser threshold; nonradiative recombination; optically pumped InGaN/GaN MQW heterostructures lasers growth; spontaneous emission; spontaneous recombination efficiency; Epitaxial growth; Gallium nitride; Laser excitation; Optical pumping; Pump lasers; Quantum well devices; Quantum well lasers; Radiative recombination; Stimulated emission; Temperature;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239946
