Title :
GaN vertical-cavity surface-emitting laser with an extended cavity
Author :
Si-Hyun Park ; Kim, Jaehoon ; Jeon, Heonsu ; Sakong, Tan ; Lee, SungNam ; Chae, Suhee ; Park, Y.
Author_Institution :
Sch. of Phys., Seoul Nat. Univ., South Korea
Abstract :
An optically pumped room temperature GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in a microlens-integrated extended cavity structure. The VCSEL device lased at record-low threshold excitation intensity of 160 kW/cm/sup 2/.
Keywords :
III-V semiconductors; gallium compounds; microlenses; optical pumping; photoluminescence; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; 293 to 298 K; GaN; GaN vertical cavity surface emitting laser; VCSEL device; microlens integrated extended cavity structure; optical pumping; room temperature; threshold excitation intensity; Gallium nitride; Laser excitation; Lenses; Microoptics; Optical pumping; Optical recording; Pump lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239948
