DocumentCode
2204651
Title
GaN vertical-cavity surface-emitting laser with an extended cavity
Author
Si-Hyun Park ; Kim, Jaehoon ; Jeon, Heonsu ; Sakong, Tan ; Lee, SungNam ; Chae, Suhee ; Park, Y.
Author_Institution
Sch. of Phys., Seoul Nat. Univ., South Korea
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
145
Lastpage
146
Abstract
An optically pumped room temperature GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in a microlens-integrated extended cavity structure. The VCSEL device lased at record-low threshold excitation intensity of 160 kW/cm/sup 2/.
Keywords
III-V semiconductors; gallium compounds; microlenses; optical pumping; photoluminescence; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; 293 to 298 K; GaN; GaN vertical cavity surface emitting laser; VCSEL device; microlens integrated extended cavity structure; optical pumping; room temperature; threshold excitation intensity; Gallium nitride; Laser excitation; Lenses; Microoptics; Optical pumping; Optical recording; Pump lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239948
Filename
1239948
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