Rare earth doped GaN electroluminescent devices

Author

Steckl, A.J. ; Lee, D.S. ; Heikenfeld, J. ; Munasinghe, C. ; Pan, M. ; Wang, Y. ; Yu, Z. ; Park, J. ; Baker, C. ; Jones, R.

Author_Institution

Lab. of Nanoelectron., Cincinnati Univ., OH, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

147

Lastpage

148

Abstract

In this paper, we discuss the fabrication, operation and aplications of rare-earth-doped GaN electroluminescent devices (ELDs). GaN:RE ELDs. GaN:RE ELDs emit light due to impact excitation of the RE ions by hot carriers followed by radiative relaxation. By appropriately choosing the RE dopant, narrow line width emission can be obtained at selected wavelengths from the ultraviolet to the infrared. The deposition of GaN:RE layers is carried out primarily by MBE. GaN growth mechanism and optimization for RE emission are discussed based on RE concentration, growth temperature, and III-V ratio. We have investigated the optimum growth conditions of RE doped GaN phosphors.

Keywords

III-V semiconductors; electroluminescent devices; erbium; europium; flat panel displays; gallium compounds; hot carriers; impurity distribution; molecular beam epitaxial growth; phosphors; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; thulium; wide band gap semiconductors; GaN growth mechanism; GaN:Er; GaN:Eu; GaN:Tm; III-V ratio; flat panel displays; growth temperature; hot carriers; impact excitation; infrared emission; narrow line width emission; radiative relaxation; rare earth doped GaN electroluminescent device; rare earth doped GaN phosphors; ultraviolet emission; Electroluminescent devices; Erbium; Gallium nitride; Light emitting diodes; Optical materials; Photonic band gap; Prototypes; Semiconductor materials; Stimulated emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239949

Filename

1239949