Title :
One dimensional heterostructures and resonant tunneling in III-V nanowires
Author :
Thelander, C. ; Ohlsson, B.J. ; Bjork, M.T. ; Martensson, T. ; Persson, A.I. ; Deppert, K. ; Larsson, M.W. ; Wallenberg, L.R. ; Samuelson, L.
Author_Institution :
Dept. of Solid State Phys., Lund Univ., Sweden
Abstract :
We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; nanotechnology; nanowires; resonant tunnelling diodes; semiconductor epitaxial layers; semiconductor growth; single electron transistors; GaAs; III-V nanowires; InAs; InP; InP heterostructure barriers; epitaxially nucleated semiconductor nanowires growth; gold particles; one dimensional heterostructures; resonant tunneling diodes; single electron transistors; Contacts; Electric variables measurement; Gold; III-V semiconductor materials; Indium phosphide; Nanowires; Resonant tunneling devices; Single electron transistors; Substrates; Wires;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239951
