DocumentCode
2204719
Title
Catalyst-free GaAs nanowires grown by MBE
Author
Gambin, V. ; Stark, T. ; Cavus, Abdullah ; Mensa, D. ; Lange, M. ; Block, T.
Author_Institution
Northrop Grumman Space Technol., Redondo Beach, CA, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
153
Lastpage
154
Abstract
Devices based on self-assembled III-V nanowires have novel applications in nano-photonics and electronics due to their reduced-dimensional nature. Many materials have been used to form nanowires, including Si, Ge, InP, GaAs, GaP, GaN, and ZnO. In this work, GaAs nanowires were grown on lithographically defined, SixN1-x coated, InP substrates using solid source MBE. Crystalline and defect structures were analyzed using cross-section high-resolution transmission electron microscopy (HRTEM).
Keywords
III-V semiconductors; gallium arsenide; nanowires; semiconductor epitaxial layers; stacking faults; transmission electron microscopy; GaAs; GaAs nanowire; MBE; Si1-xN1-x-InP; SixN1-x coated InP substrates; TEM; crystal structure; defect structure; high resolution transmission electron microscopy; lithography; nanoelectronics; nanophotonics; self assembled III-V nanowire; Crystalline materials; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Indium phosphide; Nanoscale devices; Nanowires; Self-assembly; Solids; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239952
Filename
1239952
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