Title :
Multiline photoluminescence spectra of lattice-matched GaAs/AlGaAs quantum dots
Author :
Ikeda, K. ; Yamagiwa, M. ; Minami, F. ; Koguchi, N.
Author_Institution :
Dept. of Phys., Tokyo Inst. of Technol., Japan
Abstract :
We present experimental results showing that the spectral width of optical transition, especially of exciton transitions, is narrow enough in lattice-matched GaAs/AlGaAs QDs, and the multi-line emission spectrum is due to optical confined exciton multiplexes.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; photoluminescence; semiconductor quantum dots; spectral line breadth; GaAs-AlGaAs; exciton multiplex; exciton transition; lattice matched GaAs/AlGaAs quantum dots; lattice matching; multiline emission spectrum; optical transition; photoluminescence spectra; spectral width; Charge carrier processes; Excitons; Gallium arsenide; Luminescence; Optical microscopy; Photoluminescence; Pulse measurements; Quantum dots; Stimulated emission; US Department of Transportation;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239953
