Title :
Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering
Author :
Susaki, Wataru ; Ukawa, S. ; Ohno, Nobuhito ; Takeuchi, Hideo ; Yamamoto, Yoshitugu ; Hattori, Ryo ; Shima, Akihiro ; Mihashi, Yutaka
Author_Institution :
Osaka Electro-Commun. Univ., Neyagawa, Japan
Abstract :
In this paper, subband energy levels of an AlGaAs separate-confinement-hetrostructure (SCH) double quantum well (DQW) layer are determined by photoreflectance (PR) and compared with those determined by the self-excited ERS of lasers fabricated from the same DQW structure but with different waveguide thickness. Subband energy levels determined by both measurements are in a good agreement.
Keywords :
III-V semiconductors; Raman spectra; aluminium compounds; band structure; gallium arsenide; photoreflectance; quantum well lasers; semiconductor quantum wells; AlGaAs; AlGaAs heterostructure; double quantum well AlGaAs laser; photoreflectance; self excited electron Raman scattering; subband energy level; Charge carrier processes; Electrons; Energy states; Equations; Laser transitions; Optical waveguides; Quantum well lasers; Raman scattering; Temperature sensors; Waveguide lasers;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239954
