GaN Device Technology: Manufacturing, Characterization, Modelling and Verification

Author

Ciccognani, W. ; Giannini, F. ; Limit, E. ; Longhi, P.E. ; Nanni, A. ; Serino, A. ; Lanzieri, C. ; Peroni, M. ; Romanini, P. ; Camarchia, V. ; Pirola, M. ; Ghione, G.

Author_Institution

Dipt. di Ing. Elettron., Univ. di Roma ´´Tor Vergata´´, Rome

fYear

2008

fDate

23-24 April 2008

Firstpage

1

Lastpage

6

Abstract

Gallium Nitride´s superior physical properties, in comparison with other semiconductors, make GaNHEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and verification of different families of high efficiency, high- power devices manufactured at SELEX Sistemi Integrati are reported. Process, characterization and modelling phases are analyzed to improve and refine the technology´s fabrication techniques, thermal degradation issues and dispersion phenomena.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device reliability; wide band gap semiconductors; 3G/4G base stations; GaN; HEMT technology; SELEX Sistemi Integrati; WiMAX; device characterization; device modelling; device verification; gallium nitride device technology; high electron mobility transistor; radar systems; reliability; semiconductors; thermal degradation; Base stations; Gallium nitride; III-V semiconductor materials; Power system modeling; Radar; Refining; Semiconductor device manufacture; Transmitters; Virtual manufacturing; WiMAX; FETs characterization; GaN Technology; load pull;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Techniques, 2008. COMITE 2008. 14th Conference on

Conference_Location

Prague

Print_ISBN

978-1-4244-2137-4

Electronic_ISBN

978-1-4244-2138-1

Type

conf

DOI

10.1109/COMITE.2008.4569884

Filename

4569884