DocumentCode
2204926
Title
Optical detection of coherent GHz phonon generation in a high power GaN/AlGaN microwave FET
Author
Song, Jung-Hoon ; Zhang, Qiang ; Patterson, W., III ; Nurmikko, A.V. ; Uren, M.J. ; Hilton, K.P. ; Balmer, R.S. ; Martin, T.
Author_Institution
Dept. of Eng., Brown Univ., Providence, RI, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
173
Lastpage
174
Abstract
The time-varying electron density in the channel of a microwave GaN/AlGaN FET gives raise to GHz coherent phonon generation due to the screening of the giant piezoelectric fields, which we measure optically. Such propagating nonthermal channels of energy release may be of relevance to future high power devices.
Keywords
III-V semiconductors; aluminium compounds; electro-optical effects; electron density; gallium compounds; microwave field effect transistors; optical sensors; phonons; shielding; wide band gap semiconductors; GaN-AlGaN; GaN/AlGaN microwave FET; coherent GHz phonon generation; electron density; giant piezoelectric fields; nonthermal channels; optical detection; power devices; Aluminum gallium nitride; Electron optics; Gallium nitride; High power microwave generation; Microwave FETs; Microwave devices; Microwave generation; Optical detectors; Phonons; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239961
Filename
1239961
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