DocumentCode :
2204926
Title :
Optical detection of coherent GHz phonon generation in a high power GaN/AlGaN microwave FET
Author :
Song, Jung-Hoon ; Zhang, Qiang ; Patterson, W., III ; Nurmikko, A.V. ; Uren, M.J. ; Hilton, K.P. ; Balmer, R.S. ; Martin, T.
Author_Institution :
Dept. of Eng., Brown Univ., Providence, RI, USA
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
173
Lastpage :
174
Abstract :
The time-varying electron density in the channel of a microwave GaN/AlGaN FET gives raise to GHz coherent phonon generation due to the screening of the giant piezoelectric fields, which we measure optically. Such propagating nonthermal channels of energy release may be of relevance to future high power devices.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical effects; electron density; gallium compounds; microwave field effect transistors; optical sensors; phonons; shielding; wide band gap semiconductors; GaN-AlGaN; GaN/AlGaN microwave FET; coherent GHz phonon generation; electron density; giant piezoelectric fields; nonthermal channels; optical detection; power devices; Aluminum gallium nitride; Electron optics; Gallium nitride; High power microwave generation; Microwave FETs; Microwave devices; Microwave generation; Optical detectors; Phonons; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239961
Filename :
1239961
Link To Document :
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