Title :
Analysis of high pulse power generation using novel excitation of IGBT
Author :
Liao, Tsai-Sheng ; Yu, Paul ; Zucker, Oved
Author_Institution :
Dept of ECE, Univ. of California, San Diego, CA, USA
Abstract :
In this paper, we analyze numerically and compare the performance of the optical IGBT and the conventional IGBT. With optical excitation of the device, very high current switching can be achieved. Same dimensions and geometry are used in both devices: and scaling of dimensions and circuit parameter values is employed to simulate the high power performance of the optical IGBT. Our results show that, with sufficient optical power illuminating the channel of the optical IGBT, the switch can be closed quickly. In addition, with the gate controlled by light and not by voltage, the conduction channel can be much wider and hence it can carry more carriers for high current operation. The wider channel has the additional advantage of a smaller current density and this can relieve the thermal problem
Keywords :
bipolar transistor switches; equivalent circuits; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; pulsed power switches; semiconductor device models; Debye length; IGBT excitation; SILVACO simulation; conventional IGBT; electron-hole pairs; equivalent circuit; high pulse power generation; light controlled gate; narrow MOS gate; optical IGBT; photogenerated electrons; photogenerated holes; total current density; transient response; very high current switching; wider conduction channel; Circuit simulation; Geometrical optics; Insulated gate bipolar transistors; Lighting control; Optical devices; Optical pulse generation; Optical switches; Performance analysis; Power generation; Solid modeling;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981443
