Title :
High speed, low power electronics using Sb-based semiconductors
Author :
Magno, R. ; Boos, J.B. ; Bennett, B.R. ; Ikossi, K. ; Glaser, E.R. ; Papanicolaou, N.A. ; Anconca, M.G. ; Tinkham, B.P. ; Kruppa, W. ; Park, D. ; Shanabrook, B.V. ; Mittereder, J. ; Chang, W. ; Hobart, K.D. ; Bass, R. ; Dietrich, H.B. ; Mohney, S.E. ; Wan
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
In this paper the current status of the design,fabrication,and characterization of Sb-based HEMTs (6.05Am) and HBTs(6.2Am) in our group will be presented.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; low-power electronics; HEMT; InGaSb-InAlAsSb; Sb based HEMTs; Sb based semiconductors; low power electronics; Etching; Fabrication; HEMTs; Heterojunction bipolar transistors; Laboratories; Lattices; Low power electronics; MODFETs; Ohmic contacts; Space technology;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239962
