Silicon power devices: RF power transistor & electric power device

Author

Liu, Ying-Kun ; Zhao, Tong ; Li, Song-Fa

Author_Institution

Hebei Semicond. Res. Inst., China

Volume

1

fYear

2001

fDate

2001

Firstpage

149

Abstract

This paper reviews the history, evolution, and applications of silicon microwave & RF power transistors and electric power devices. The current status of silicon microwave & RF power transistors (BJT, DMOSFET, SIT) and a new kind of electric power device - RSD in HSRI are mainly presented. Important techniques for manufacturing such power devices are introduced. Future trends of such power devices are given briefly

Keywords

microwave bipolar transistors; microwave power transistors; power MOSFET; power bipolar transistors; power semiconductor switches; reviews; silicon; static induction transistors; technological forecasting; BJT; DMOSFET; RF power transistors; SIT; Si; chip capacitors; device performances; electric power devices; future trends; manufacturing; microwave power transistors; power device design; power semiconductor devices; pulse power; reversely switch-on dynistor; silicon power devices; Dry etching; Lithography; Microwave devices; Microwave transistors; Military computing; Packaging; Power transistors; Radio frequency; Semiconductor device manufacture; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981444

Filename

981444