Title :
Fabrication processes for high performance InAs-based HBTs
Author :
Thomas, S., III ; Arthur, A. ; Elliot, K. ; Chow, D.H. ; Brewer, P. ; Rajavel, R. ; Shi, B. ; Deelman, P. ; Fields, C.H. ; Madhav, M.
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
InAs-based HBT technology was discussed. Several of the available fabrication processes were presented, as well as the device performance obtained from some of the options.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated circuit technology; HBT integrated circuits; InAs; InAs based HBT fabrication; device performance; double-flip process; emitter resistance; metamorphic growth; semi-insulating substrate; transferred substrate approach; transmission line method measurements; Doping; Effective mass; Electron mobility; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Material properties; Photonic band gap; Wafer bonding;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239963
