Title :
A comparison of dry plasma and wet chemical passivation of GaSb photodiodes
Author :
Bhagwat, Vinay ; Langer, J.P. ; Bhat, LB ; Dutta, P.S. ; Refaat, Tamer ; Abedin, M. Nurul
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
In this paper, the effect of ammonium sulfide passivation on the wet etched sample is reported. The device performance in terms of leakage current breakdown voltage, zero bias resistance area product and responsivity for the diodes is reviewed.
Keywords :
III-V semiconductors; electric breakdown; electric resistance; etching; gallium compounds; leakage currents; passivation; photodiodes; GaSb; GaSb photodiodes; ammonium sulfide passivation; breakdown voltage; dry plasma passivation; leakage current; semiconductor diodes; wet chemical passivation; wet etching; zero bias resistance; Argon; Chemicals; Diodes; Leakage current; Passivation; Photodiodes; Plasma applications; Plasma chemistry; Plasma devices; Wet etching;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239964
