A high frequency, high power VDMOSFET

Author

Liu, Ying-Kun ; Deng, Jian-Guo ; Lang, Xiu-Lan ; Zhang, Ying-Qiu ; Wu, Jian ; Zhou, Ming-Hui ; Li, Song-Fa ; Liang, Chun-Guang

Author_Institution

Dept. of Phys., Lanzhou Univ., China

Volume

1

fYear

2001

fDate

2001

Firstpage

155

Abstract

A high frequency high power n-channel VDMOSFET suitable for use in plasma generation, excitation, aural power amplifiers of the VHF television transmitters and FM broadcasting transmitters was designed and fabricated. Terraced gate structure and refractory molybdenum (Mo) gate electrodes are employed for reduction of gate-drain capacitance (Cgd) and gate series resistance. Parallel operation of the MOSFET has been successfully achieved to delivered output power of 450 W with 13.7 dB gain and 74% drain efficiency at V_DS=50 V f=175 MHz, 600 μs pulse width, 20% duty cycle. The output power of 700 W with 16.6 dB gain and 70% drain efficiency has been obtained at f=100 MHz under the same conditions

Keywords

HF amplifiers; power MOSFET; power amplifiers; 100 MHz; 13.7 dB; 16.6 dB; 175 MHz; 450 W; 50 V; 600 mus; 70 percent; 700 W; 74 percent; FM broadcasting transmitters; VHF television transmitters; aural power amplifiers; drain efficiency; duty cycle; gate series resistance; gate-drain capacitance; high frequency high power VDMOSFET; output power; plasma excitation; plasma generation; refractory Mo gate electrodes; terraced gate structure; Capacitance; Electrodes; Frequency; Gain; High power amplifiers; MOSFET circuits; Plasma displays; Power generation; TV broadcasting; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981445

Filename

981445