Title :
A high frequency, high power VDMOSFET
Author :
Liu, Ying-Kun ; Deng, Jian-Guo ; Lang, Xiu-Lan ; Zhang, Ying-Qiu ; Wu, Jian ; Zhou, Ming-Hui ; Li, Song-Fa ; Liang, Chun-Guang
Author_Institution :
Dept. of Phys., Lanzhou Univ., China
Abstract :
A high frequency high power n-channel VDMOSFET suitable for use in plasma generation, excitation, aural power amplifiers of the VHF television transmitters and FM broadcasting transmitters was designed and fabricated. Terraced gate structure and refractory molybdenum (Mo) gate electrodes are employed for reduction of gate-drain capacitance (Cgd) and gate series resistance. Parallel operation of the MOSFET has been successfully achieved to delivered output power of 450 W with 13.7 dB gain and 74% drain efficiency at VDS=50 V f=175 MHz, 600 μs pulse width, 20% duty cycle. The output power of 700 W with 16.6 dB gain and 70% drain efficiency has been obtained at f=100 MHz under the same conditions
Keywords :
HF amplifiers; power MOSFET; power amplifiers; 100 MHz; 13.7 dB; 16.6 dB; 175 MHz; 450 W; 50 V; 600 mus; 70 percent; 700 W; 74 percent; FM broadcasting transmitters; VHF television transmitters; aural power amplifiers; drain efficiency; duty cycle; gate series resistance; gate-drain capacitance; high frequency high power VDMOSFET; output power; plasma excitation; plasma generation; refractory Mo gate electrodes; terraced gate structure; Capacitance; Electrodes; Frequency; Gain; High power amplifiers; MOSFET circuits; Plasma displays; Power generation; TV broadcasting; Transmitters;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981445
