Title :
Oxides beyond SiO2: strategies to integrate oxides epitaxially with silicon
Author :
Schlom, Darrell G.
Author_Institution :
Dept. of Mater. Sci. & Eng., Penn State Univ, University Park, PA, USA
Abstract :
A methodology is described, based on thermodynamics and oxidation kinetics, for the integration of oxides with silicon with the goal of achieving the desired oxide in close proximity with the underlying silicon substrate.
Keywords :
oxidation; silicon compounds; Si; SiO2; oxidation; proximity; silicon substrate; thermodynamics; Chemicals; Dielectric materials; High-K gate dielectrics; Kinetic theory; MOSFETs; Molecular beam epitaxial growth; Optical buffering; Oxidation; Semiconductor materials; Silicon;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239965
