DocumentCode
2205018
Title
Work function determination of zinc oxide films
Author
Sundaram, K.B. ; Khan, Ashamin
Author_Institution
Dept. of Electr. Eng. & Commun. Sci., Univ. of Central Florida, Orlando, FL, USA
fYear
1996
fDate
11-14 Apr 1996
Firstpage
674
Lastpage
676
Abstract
Zinc oxide-silicon heterojunctions were fabricated using both n and p-type silicon. The zinc oxide films were deposited by magnetron sputtering process at various substrate temperatures to form these devices. The electrical properties of these devices were measured and the work function of the zinc oxide was evaluated
Keywords
II-VI semiconductors; Schottky barriers; semiconductor heterojunctions; silicon; sputtered coatings; work function; zinc compounds; Schottky barrier model; ZnO-Si; ZnO-Si heterojunctions; electrical properties; magnetron sputtering; thin films; work function determination; Heterojunctions; Indium tin oxide; Optical films; Photovoltaic cells; Piezoelectric films; Semiconductor films; Silicon; Sputtering; Substrates; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE
Conference_Location
Tampa, FL
Print_ISBN
0-7803-3088-9
Type
conf
DOI
10.1109/SECON.1996.510155
Filename
510155
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