Title :
Work function determination of zinc oxide films
Author :
Sundaram, K.B. ; Khan, Ashamin
Author_Institution :
Dept. of Electr. Eng. & Commun. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
Zinc oxide-silicon heterojunctions were fabricated using both n and p-type silicon. The zinc oxide films were deposited by magnetron sputtering process at various substrate temperatures to form these devices. The electrical properties of these devices were measured and the work function of the zinc oxide was evaluated
Keywords :
II-VI semiconductors; Schottky barriers; semiconductor heterojunctions; silicon; sputtered coatings; work function; zinc compounds; Schottky barrier model; ZnO-Si; ZnO-Si heterojunctions; electrical properties; magnetron sputtering; thin films; work function determination; Heterojunctions; Indium tin oxide; Optical films; Photovoltaic cells; Piezoelectric films; Semiconductor films; Silicon; Sputtering; Substrates; Zinc oxide;
Conference_Titel :
Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
0-7803-3088-9
DOI :
10.1109/SECON.1996.510155
