• DocumentCode
    2205024
  • Title

    The research on breakdown voltage of high voltage SOI LDMOS devices with shielding trench

  • Author

    Liu, Qiyu ; Li, Zhaoji ; Zhang, Bo ; Fang, Jian

  • Author_Institution
    IME, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    159
  • Abstract
    A novel structure of the high voltage SOI LDMOS with the shielding trench and its breakdown mechanism are proposed, which largely increases in the breakdown voltage of the high voltage SOI devices. The breakdown voltage more than 2000 V of the SOI LDMOS is obtained by the optimization
  • Keywords
    MOSFET; semiconductor device breakdown; silicon-on-insulator; 2000 V; breakdown mechanism; breakdown voltage; high voltage SOI LDMOS devices; high voltage SOI devices; optimization; shielding trench; Breakdown voltage; Dielectrics; Diodes; Immune system; Leakage current; Numerical analysis; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.981446
  • Filename
    981446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2205024