DocumentCode :
2205039
Title :
Characterization techniques for high-mobility strained Si CMOS
Author :
Zollner, S. ; Ran Liu ; Qianghua Xie ; Canonico, Massimo ; Shifeng Lu ; Kottke, M. ; Xiang-dong Wang ; Sadaka, Mariam ; White, T. ; Barr, A. ; Thomas, Stephan ; Nguyen, B.-Y. ; Cook, Christopher
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
183
Lastpage :
184
Abstract :
This paper discusses critical characterization techniques for strained Si technology, especially to determine the strain state, thickness, and Ge content in the underlying Si1-xGex alloy pseudosubstrate.
Keywords :
elemental semiconductors; high electron mobility transistors; semiconductor technology; silicon; Ge content; Si; Si technology; Si1-xGex alloy pseudosubstrate; SiGe; high-mobility strained Si CMOS; strain state; thickness; Charge carrier processes; Germanium alloys; HEMTs; MODFETs; Reflectivity; Silicon alloys; Silicon on insulator technology; Sputtering; Tensile stress; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239966
Filename :
1239966
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2205039
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