• DocumentCode
    2205065
  • Title

    Micro-Raman scattering study on strain induced by compositional variation in single crystalline Si1-xGex discs

  • Author

    Islam, M.R. ; Yamada, M.

  • Author_Institution
    Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    185
  • Lastpage
    186
  • Abstract
    In this paper we report for the first time micro-Raman scattering study on the residual strain in single crystalline Si1-xGex.
  • Keywords
    Ge-Si alloys; Raman spectra; internal stresses; semiconductor materials; SiGe; microRaman scattering; residual strain; single crystalline Si1-xGex; strain induced SiGe; Capacitive sensors; Crystallization; Crystals; Information science; Materials science and technology; Phonons; Position measurement; Raman scattering; Strain measurement; Tail;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239967
  • Filename
    1239967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2205065