DocumentCode :
2205065
Title :
Micro-Raman scattering study on strain induced by compositional variation in single crystalline Si1-xGex discs
Author :
Islam, M.R. ; Yamada, M.
Author_Institution :
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
185
Lastpage :
186
Abstract :
In this paper we report for the first time micro-Raman scattering study on the residual strain in single crystalline Si1-xGex.
Keywords :
Ge-Si alloys; Raman spectra; internal stresses; semiconductor materials; SiGe; microRaman scattering; residual strain; single crystalline Si1-xGex; strain induced SiGe; Capacitive sensors; Crystallization; Crystals; Information science; Materials science and technology; Phonons; Position measurement; Raman scattering; Strain measurement; Tail;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239967
Filename :
1239967
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2205065
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