Title :
High speed LIGBT with localized lifetime control by using high dose and low energy helium implantation
Author :
Fang, Jian ; Li, Zhaoji ; Li, Hongyan ; Yang, Jian
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A high speed LIGBT with localized lifetime control by using high dose and low energy helium implantation (LC-IGBT) is proposed. Compared with AS-LIGBTs and the conventional LIGBTs, the partial irradiation results show that trade-off relationship between turn-off time and forward voltage drop has been improved. It is the advanced lifetime control method stable for huge thermal budget and applicable in any steps of device fabrication, so that it improves lifetime engineering possibilities in power integrated circuit with respected to conventional lifetime control methods
Keywords :
carrier lifetime; helium; insulated gate bipolar transistors; ion implantation; power semiconductor devices; AS-LIGBTs; He; LC-IGBT; advanced lifetime control method; conventional LIGBTs; device fabrication; forward voltage drop; helium implantation; high speed LIGBT; lifetime engineering; localized lifetime control; partial irradiation; power integrated circuit; thermal budget; turn-off time; Anodes; Fabrication; Helium; Photonic band gap; Power engineering and energy; Power integrated circuits; Silicon; Switches; Thermal engineering; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981448
